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| STGF3NC120HD N-CHANNEL 3A - 1200V TO-220FP FAST PowerMESHTM IGBT with Integral Damper Diode Table 1: General Features TYPE STGF3NC120HD s s s s Figure 1: Package IC @100C 3A VCES 1200 V VCE(sat) (Max) @25C < 2.8 V LOW ON-VOLTAGE DROP (Vcesat) HIGH CURRENT CAPABILITY OFF LOSSES INCLUDE TAIL CURRENT HIGH SPEED 3 1 2 DESCRIPTION This PowerMESHTM IGBT is designed using the latest high voltage technology based on a patented strip layout. A new lifetime control allows good switching performance and low voltage drop. This IGBT featuring a co-packaged diode is optimized for horizontal deflection applications in small and medium sets. TO-220FP Figure 2: Internal Schematic Diagram APPLICATIONS s HORIZONTAL DEFLECTION s HOME APPLIANCE s LIGHTING Table 2: Order Code PART NUMBER STGF3NC120HD MARKING GF3NC120HD PACKAGE TO-220FP PACKAGING TUBE Rev. 2 January 2005 1/11 STGF3NC120HD Table 3: Absolute Maximum ratings Symbol VCES VECR VGE IC IC ICM ( ) PTOT VISO Tstg Tj Parameter Collector-Emitter Voltage (VGS = 0) Emitter-Collector Voltage Gate-Emitter Voltage Collector Current (continuous) at TC = 25C Collector Current (continuous) at TC = 100C Collector Current (pulsed) Total Dissipation at TC = 25C Derating Factor Insulation withstand voltage AC (t=1sec, Tc=25C) Storage Temperature Operating Junction Temperature range Value 1200 20 20 6 3 10 25 0.20 2500 -55 to 150 Unit V V V A A A W W/C V C ( ) Pulse width limited by safe operating area Table 4: Thermal Data Min. Rthj-case Rthj-amb TL Thermal Resistance Junction-case Thermal Resistance Junction-ambient Maximum Lead Temperature for Soldering Purpose (1.6 mm from case, for 10 sec.) 300 Typ. Max. 5.0 62.5 C/W C/W C ELECTRICAL CHARACTERISTICS (TCASE =25C UNLESS OTHERWISE SPECIFIED) Table 5: On/Off Symbol VBR(CES) ICES IGES VGE(th) VCE(sat) Parameter Collector-Emitter Breakdown Voltage Collector cut-off Current (VGE = 0) Gate-Emitter Leakage Current (VCE = 0) Gate Threshold Voltage Collector-Emitter Saturation Voltage Test Conditions IC = 1 mA, VGE = 0 VCE = Max Rating, TC = 25 C VCE = Max Rating, TC = 125 C VGE = 20V , VCE = 0 VCE = VGE, IC = 250 A VGE = 15V, IC = 3 A VGE = 15V, IC = 3 A, Tc= 125C 2 2.3 2.2 Min. 1200 50 1 100 5 2.8 Typ. Max. Unit V A mA nA V V V 2/11 STGF3NC120HD ELECTRICAL CHARACTERISTICS (CONTINUED) Table 6: Dynamic Symbol gfs (1) Cies Coes Cres Qg Qge Qgc ICL Parameter Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Gate-Emitter Charge Gate-Collector Charge Turn-off SOA minimum current VCC = 960 V, IC = 3 A, VGE = 15 V (see Figure 22) Vclamp = 960 V , Tj = 150C RG = 10 , VGE = 15 V 10 Test Conditions VCE = 25 V , IC = 3 A VCE = 25 V, f= 1 MHz, VGE = 0 Min. Typ. 4 470 45 6 24 3 10 32 Max. Unit S pF pF pF nC nC nC A (1) Pulsed: Pulse duration= 300 s, duty cycle 1.5% Table 7: Switching On Symbol td(on) tr (di/dt)on td(on) tr (di/dt)on Parameter Turn-on Delay Time Current Rise Time Turn-on Current Slope Turn-on Delay Time Current Rise Time Turn-on Current Slope Test Conditions VCC = 800 V, IC = 3 A RG= 10 , VGE= 15V, Tj= 25C (see Figure 20) VCC = 480 V, IC = 3 A RG= 10 , VGE= 15V, Tj= 125C (see Figure 20) Min. Typ. 15 3.5 880 14.5 4 770 Max. Unit ns ns A/s ns ns A/s Table 8: Switching Off Symbol tr(Voff) td(off) tf tr(Voff) td(off) tf Parameter Off Voltage Rise Time Turn-off Delay Time Current Fall Time Off Voltage Rise Time Turn-off Delay Time Current Fall Time Test Conditions Vcc = 800 V, IC = 3 A, RG = 10 , VGE = 15 V TJ = 25 C (see Figure 20) Vcc = 800 V, IC = 3 A, RG = 10 , VGE = 15 V Tj = 125 C (see Figure 20) Min. Typ. 72 118 250 132 210 470 Max. Unit ns ns ns ns ns ns Table 9: Switching Energy Symbol Eon (2) Eoff (3) Ets Eon (2) Eoff (3) Ets Parameterr Turn-on Switching Losses Turn-off Switching Loss Total Switching Loss Turn-on Switching Losses Turn-off Switching Loss Total Switching Loss Test Conditions VCC = 800 V, IC = 3 A RG= 10 , VGE= 15V, Tj= 25C (see Figure 21) VCC = 800 V, IC = 3 A RG= 10 , VGE= 15V, Tj= 125C (see Figure 21) Min. Typ. 236 290 526 360 620 980 Max Unit J J J J J J (2) Eon is the turn-on losses when a typical diode is used in the test circuit in figure 2. If the IGBT is offered in a package with a co-pack diode, the co-pack diode is used as external diode. IGBTs & DIODE are at the same temperature (25C and 125C) (3) Turn-off losses include also the tail of the collector current. 3/11 STGF3NC120HD Table 10: Collector-Emitter Diode Symbol If Ifm Vf trr Qrr Irm trr Qrr Irm Parameterr Forward Current Forward Current pulsed Forward On-Voltage Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current If = 1.5 A If = 1.5A, Tj = 125C If = 3 A, VR = 40 V Tj = 25C, di/dt = 100 A/s (see Figure 23) If = 3 A, VR = 40 V Tj = 125C, di/dt = 100 A/s (see Figure 23) 1.6 1.3 51 85 3.3 64 133 4.2 Test Conditions Min. Typ. Max 3 12 2.0 Unit A A V V ns nC A ns nC A 4/11 STGF3NC120HD Figure 3: Output Characteristics Figure 6: Transfer Characteristics Figure 4: Transconductance Figure 7: Collector-Emitter On Voltage vs Temperature Figure 5: Collector-Emitter On Voltage vs Collector Current Figure 8: Normalized Gate Threshold vs Temperature 5/11 STGF3NC120HD Figure 9: Normalized Breakdown Voltage vs Temperature Figure 12: Gate Charge vs Gate-Emitter Voltage Figure 10: Capacitance Variations Figure 13: Switching Losses vs Temperature Figure 11: Switching Losses vs Gate Resistance Figure 14: Switching Losses vs Collector Current 6/11 STGF3NC120HD Figure 15: Thermal Impedance Figure 18: Power Losses Figure 16: Collector-Emitter Diode Characteristics Figure 19: Power Losses Figure 17: Turn-Off SOA 7/11 STGF3NC120HD Figure 20: Test Circuit for Inductive Load Switching Figure 22: Gate Charge Test Circuit Figure 21: Switching Waveforms Figure 23: Diode Recovery Time Waveforms 8/11 STGF3NC120HD TO-220FP MECHANICAL DATA mm. MIN. 4.4 2.5 2.5 0.45 0.75 1.15 1.15 4.95 2.4 10 16 28.6 9.8 2.9 15.9 9 3 30.6 10.6 3.6 16.4 9.3 3.2 1.126 .0385 0.114 0.626 0.354 0.118 TYP MAX. 4.6 2.7 2.75 0.7 1 1.7 1.7 5.2 2.7 10.4 MIN. 0.173 0.098 0.098 0.017 0.030 0.045 0.045 0.195 0.094 0.393 0.630 1.204 0.417 0.141 0.645 0.366 0.126 inch TYP. MAX. 0.181 0.106 0.108 0.027 0.039 0.067 0.067 0.204 0.106 0.409 DIM. A B D E F F1 F2 G G1 H L2 L3 L4 L5 L6 L7 O A B L3 L6 L7 F1 F D G1 H F2 L2 L5 E 123 L4 G 9/11 STGF3NC120HD Table 11: Revision History Date 13-Dec-2004 21-Jan-2005 Revision 1 2 First release Modified Curve 17 Description of Changes 10/11 STGF3NC120HD Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics All other names are the property of their respective owners (c) 2005 STMicroelectronics - All Rights Reserved STMicroelectronics group of companies Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America 11/11 |
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